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PBL 403 05 January 2001
PBL 403 05 Multiband GSM Power Amplifier
Description.
The PBL 403 05 is a dual line-up GaAs MMIC power amplifier intended for use in multiband GSM terminals. Powered of a 3.2V supply it delivers more than 34.5 dBm output power at GSM900 and more than 31.5 dBm output power at DCS1800 or PCS1900 frequencies. The circuit uses an analog control signal to control the output power level. The circuit is housed in a specially designed QSOP28 (150 mil body) package with no special mounting requirements. The circuit is manufactured in a high performance MESFET process that ensures ruggednes for environmental variations.
Key features.
* One IC handles GSM900, DCS 1800 and PCS1900 bands. Low cost solution. Inputs matched to 50 Digital band select function. Analog gain control. Proven GaAs MESFET-reliability. Tape and Reel. SMD QSOP 28 package.
* * * * * * *
VD1_DCS
VD2_DCS
CA
VDC
Current generator
RFIN_DCS
VD3_DCS
BIAS
VD1_GSM
VD2_GSM
VD3GSM
VNEG
VSEL
VAPC
Figure 1. Block diagram.
Figure 2. Package outlook.
1
P
B
L
4
0
RFIN_GSM
RFOUTGSM
3
0
5
PBL 403 05
Maximum Ratings:
TAMB = + 25C unless otherwise stated. Parameter Supply voltage Supply voltage Power control voltage Operating Case Temperature Storage Temperature Range Conditions short supply spike Symbol VDD VDD VAPC TCASE TSTORAGE -25 -30 Min. Typ. Max. 6.0 5.0 4.2 +80 +100 Unit V V V C C
Electrical Characteristics for PA in GSM 900 mode:
VCC = 3.2 V, TAMB = + 25C, Z = 50 , PIN = 10 dBm, f = 880 - 915 MHz and VAPC adjusted to give POUT = 34.5 dBm unless othervise noted. Pulsed operation with pulse width of 577s and a duty cycle of 1:8. VNEG= -4.0 V, VSEL= 0.0 V. Parameter Output Power Power added efficiency 2 nd harmonic 3 rd harmonic Isolation Power degradation Stability and leakage spurious - 0 dBm < POUT < 34.5 dBm - 0 dBm < POUT < 34.5 dBm PIN = 11.5 dBm, VAPC <= 0.5 V TAMB = -25 C to +75 C PIN = 8.5 dBm, VSEL= 0.6 V, VAPC = 2.8 V, TAMB = -25 C to +75 C Output VSWR = 6:1 all phases All combinations of following parameters: POUT=5 to 34.5dBm(50) VDD= 2.7 V to 5.1 V TAMB = -25 C to +75 C Noise power Input S11 Input S11 935 - 960 MHz 925 - 935 MHz VAPC = 0.5 V, POUT = 34.5dBm RBW = 30 kHz -5.2 -12 -90 -78 -5.0 -6.0 dBm dBm dBm dBm No parasitic oscillations when IDD < 2.2 A All spurious < -36 dBm 33 Conditions VAPC = 3.15 V Symbol POUT PAE 2 fo 3 fo Min. 34.5 50 Typ. 34.7 53 -7.0 -27 -30 0 0 -20 Max. Unit dBm % dBm dBm dBm dBm
Electrical Characteristics for PA in DCS 1800 mode:
VCC = 3.2 V, TAMB = + 25C, Z = 50 , PIN = 9 dBm, f = 1710 - 1785 MHz / 1850 - 1910 MHz and VAPC adjusted to give POUT = 31.5 dBm unless othervise noted. Pulsed operation with pulse width of 577s and a duty cycle of 1:8. VNEG= -4.0 V, VSEL= 2.0 V. Parameter Output Power Power added efficiency 2 nd harmonic 3 rd harmonic Isolation Power degradation Conditions VAPC = 3.15 V POUT = 31.5 dBm - 0 dBm < POUT < 31.5 dBm - 0 dBm < POUT < 31.5 dBm PIN = 10.5 dBm, VAPC = 0.5 V TAMB = -25 C to +75 C PIN = 7.5 dBm, VDD = 2.85 V VAPC = 2.8 V, TAMB = -25 C to +75 C 30 Symbol POUT PAE 2 fo 3 fo Min. 31.5 37 Typ. 31.7 41 -8.0 -15 -35 30.5 0 0 -30 Max. Unit dBm % dBm dBm dBm dBm
2
PBL 403 05
Parameter Stability and leakage spurious Conditions Output VSWR = 6:1 all phases All combinations of following parameters: POUT=5 to 31.5dBm(50) VDD= 2.7 V to 5.1 V TAMB = -25 C to +75 C Noise power 1805 - 1880 MHz 935 - 960 MHz 925 - 935 MHz VAPC = 0.5 V, POUT = 31.5dBm RBW = 30 kHz -76 -82 -70 -5.0 -14 -4.0 -6.0 dBm dBm dBm dBm Symbol Min. Typ. Max. Unit
No parasitic oscillations when IDD < 2.20 A All spurious < -36 dBm RBW = 3 MHz
Input S11 Input S11
Common specifications:
Parameter Isolation at GSM RF output when DCS is active Isolation at DCS RF output when GSM is active Conditions f = f0 f = 2 * f0, f0 = 1750 - 1785 MHz f = 2 * f0 f = 3 * f0, f0 = 880 - 915 MHz -18 -30 Symbol Min. Typ. Max. -20 -30 -15 -25 Unit dBm dBm dBm dBm
Power regulation characteristics:
Parameter Power control range Power control slope Switching time Power control current consumption Band select current consumption Negative supply current consumption Conditions GSM: VAPC = 0.5 - 3.15 V DCS: VAPC = 0.5 - 3.15 V VAPC = 0.5 - 3.15 V Step in Vref giving POUT = -15 to 32.5 dBm, up and down VAPC <= 3.15 V VSEL = 0 - 3 V VSEL = 0 - 3 V, VAPC <= 3.15 V VSEL = 0 V, VAPC <= 3.15 V ISEL INEG 0.01 5.5 0.1 7.0 mA mA IAPC 4 5 mA Symbol Min. -20 -30 Typ. Max. 34.5 31.5 150 2 Unit dBm dBm dB/V s
Current generator:
Parameter Input resistance Charge current Conditions VDC- VCA < 0.8 V VDC = 1.5 - 5.0 V, VCA = 0 V Symbol RON IGSAT Min. Typ. 100 6.7 Max. 150 10 Unit mA
3
PBL 403 05
CA
1 2 3 4 5 6 7 8 9
28 VDC 27 GND 26 25
VNEG VSEL VAPC VD1_DCS GND RFIN_DCS GND RFIN_GSM
VD3_DCS2 VD3_DCS1
24 GND 23 GND 22
VD2_DCS
21 GND 20 19 18
VD2_GSM GND GND
GND 10 VD1_GSM 11 GND 12 VD3_GSM1 13 VD3_GSM2 14
17 RFOUT_GSM2 16 RFOUT_GSM1 15
GND
Figure 3. Pin configuration.
Terminal
1 2 3 4 5 6,8,10,12,15, 18,19,21,23, 24,27 7 9 11 13, 14 16,17 20 22 25,26 28
Symbol
CA VNEG VSEL VAPC VD1_DCS GND
Function
Separate Current Source +terminal Negative supply Digital band select function Analog output power control Power supply for 1st stage of high band chain
RFIN_DCS RFIN_GSM VD1_GSM VD3_GSM RFOUT_GSM VD2_GSM VD2_DCS VD3_DCS VDC
AC coupled 50ohm input AC coupled 50ohm input Power supply for 1st stage of low band chain Power supply for output stage stage of low band chain Power supply for 2nd stage of low band chain Power supply for 2nd stage of high band chain RF output and power supply for output stage of high band chain Separate Current Source -terminal
4
PBL 403 05
R1A_GSM 50 2.0
R1A_DCS 50 2.0
40
1.8
40
1.8
30
1.6
30
1.6
20
1.4
20
1.4
10
POUT (dBm)
1.2
10
1.2
POUT (dBm)
IDD (A)
IDD (A)
0
1.0
0
1.0
-10
0.8
-10
0.8
-20
0.6
-20
0.6
-30
Vneg = -4.0V Vdd = 3.2V Vsel = 0.0V Pin = 10dBm freq = 900MHz
0.4
-30
Vneg = -4.0V V dd= 3.2V V sel=2 .0V
0.4
-40
0.2
-40
Pin = 9dBm freq= 175 0M Hz
0.2
-50 0 1 2 VAPC (V) 3 4
0
-50 0 1 2 VAPC (V) 3 4
0
Figure 4. Pout and IDD versus VAPC at 900 MHz.
Figure 5. Pout and IDD versus VAPC at 1750 MHz.
5
PBL 403 05
VDD VDD VAPC VSEL VNEG CA VDC
C25 1F
C26 1F
C11 470pF L2 18nH
C27 33nF
1 2 3 MS36 C15 470pF sma 50 strip l = 3.0mm w = 0.3mm 4 5 6 7 8 50 strip sma C14 470pF MS27 l = 4.0mm w = 0.3mm C3 470pF MS29 l = 6.0mm w = 1.0mm L9 C33 1F 120nH C32 1F l = 3.0mm w = 0.3mm 14 11 12 13 9 10
CA VNEG VSEL VAPC VD1_DCS
VDC
28 27
VD3_DCS2 VD3_DCS1
26 25 24 23
MS33 l = 1mm w = 1.5mm
50 strip
C5 100pF sma
C4
3.9pF
PBL 403 05
MS35 l = 3mm w = 0.3mm C28 10pF C7 470pF
C31 1F
RFIN_DCS
VD2_DCS
22 21
RFIN_GSM
VD2_GSM
20 19 18
MS32 l = 7mm w = 0.3mm
C30 1F
VD1_GSM RFOUT_GSM2 VD3_GSM1 VD3_GSM2 RFOUT_GSM1
17 16 15 MS31 l = 1.5mm w = 1.5mm
C23
8.2pF
C1
7.5pF
L7 4.7nH
50 strip
C2 100pF sma
MS = Micro Strip (+measurements)
The specifications apply to performance measured in test fixture.
VDD
Figure 6. Verification board schematic.
Figure 7. Verification board layout.
6
PBL 403 05
Package drawing, QSOP 28
D e
Dim. A A1 B C
E H
millimeters min. max. 1.35 0.10 0.2 0.21 0.19 9.80 3.81 0.635mm 5.80 0.4 0.41 6.20 1.27 1.75 0.25 0.31 0.25 9.98 3.99
inches min. 0.532 0.004 0.008 0.0075 0.386 0.150
max. 0.688 0.0098 0.012 0.0098 0.393 0.157
D E e H L
0.025 inch ref. 0.2284 0.016 0.2240 0.050
= 0-8 deg.
Pin no 1
B 45 deg.
A A1 C L
Information given in this data sheet is believed to be accurate and reliable. However no responsibility is assumed for the consequences of its use nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Ericsson Microelectronics AB. These products are sold only according to Ericsson Microelectronics AB's general conditions of sale, unless otherwise confirmed in writing.
Specifications subject to change without notice. 1522-PBL 403 10 Uen Rev.A (c) Ericsson Microelectronics AB January 2001
Ericsson Microelectronics AB S-164 81 Kista-Stockholm, Sweden Telephone: (08) 757 50 00 www.ericsson.se/microe 7

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